Hawaii

1024x1024 HgCdTe FPA

Rockwell's Hawaii HgCdTe FPA offers discriminating IR sensor users a suite of highly desired features: 1024x1024 format with only four outputs, <10 e- read noise, up to 1 MHz data rate per output, low power dissipation, <0.1 e-/sec dark current at a convenient 78K, and a simple user interface.

1024x1024 HgCdTe/Al₂O₃
SWIR Focal Plane Array

Features

High Resolution 18.5 µm Pixel Pitch
Ultra-Low Read Noise with Off-Chip CDS
Low Power Multiplexer/Readout Architecture
0.8 µm CMOS with nearly 3.5 million Transistors
Four Independent Quadrants with Source Follower or Direct Bus Outputs
2.5 µm Detector Cutoff Wavelength
Low Dark Current at a convenient 78K
High-Reliability BCS Hybrid FPA Methodology
Low MOSFET Self-emission (Glow)
3.4 to 6.8 µV/e- signal conversion gain

Parameter	Measured Values	Units
Detector Interface Circuit	SFD	-
Cell Pitch	18.5	µm
Die Size	<400	mm²
Integration Capacity	1.0x10⁵	carriers
Integration Capacitance	18-35	fF
Signal Conversion Gain	3.4-6.8	V/e-
Output Signal Excursion	.4-1	V
Minimum Read Noise	<10	e-
Dynamic Range	up to 10 ⁴	V/V
Maximum Data Rate	<1	MHz
Maximum Slew Rate	400	nsec
Peak D* @ min Qb	>1x10¹⁴	Jones
Power Dissipation	<1	mW

The 84 pin Ceramic Chip Carrier has been modified.
Please click the highlighted area to look at the specifications.

Email Bill Weissbard (wweissbard@rwsc.com) with any questions concerning this web page.

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